Interface Characteristics of Sapphire Direct Bonding for High-Temperature Applications
نویسندگان
چکیده
منابع مشابه
Interface Characteristics of Sapphire Direct Bonding for High-Temperature Applications
In this letter, we present a sapphire direct bonding method using plasma surface activation, hydrophilic pre-bonding, and high temperature annealing. Through the combination of sapphire inductively coupled plasma etching and the direct bonding process, a vacuum-sealed cavity employable for high temperature applications is achieved. Cross-sectional scanning electron microscopy (SEM) research of ...
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Three-inch (100) gallium arsenide wafers were bonded to (1102) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 ◦C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close to the fracture energy of the bulk material. The bond energy was measured as a function of the temperature. Since the thermal ...
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ژورنال
عنوان ژورنال: Sensors
سال: 2017
ISSN: 1424-8220
DOI: 10.3390/s17092080